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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STA333SML датащи(PDF) 8 Page - STMicroelectronics |
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STA333SML датащи(HTML) 8 Page - STMicroelectronics |
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8 / 17 page  Electrical specifications STA333SML 8/17 DocID025317 Rev 2 3.5 Electrical specifications - power section The specifications in Table 7 below are given for the conditions VCC = 13 V, VDD = 3.3 V, fSW = 384 kHz, Tamb = 25 °C and RL = 8 , unless otherwise specified. Table 7. Electrical specifications for power section Symbol Parameter Conditions Min. Typ. Max. Unit Po Output power BTL THD = 1% - 8 - W THD = 10% - 10 - RdsON Power P- channel/N-channel MOSFET (total bridge) ld = 1 A - 106 m ldss Power P- channel/N-channel leakage VCC = 18 V - - 10 µA gP Power P-channel RdsON matching ld = 1 A 95 - - % gN Power N-channel RdsON matching ld = 1 A 95 - - % ILDT Low-current dead time (static) Resistive load, refer to Figure 4 - 5 10 ns IHDT High-current dead time (dynamic) Refer to Figure 5 -10 20 ns tr Rise time Resistive load, refer to Figure 4 - 8 10 ns tf Fall time Resistive load, refer to Figure 4 - 8 10 ns VCC Supply voltage - 4.5 - 18 V IVCC Supply current from VCC in power down PWRDN = 0 30 60 200 µA Supply current from VCC in operation PCM input signal = -60 dBFS Switching frequency = 384 kHz No LC filters -30 50 mA IVDD_DIG Supply current for FFX processing (reference only) Internal clock = 49.152 MHz 10 30 50 mA Supply current in standby - 8 11 25 mA Av_DIG Digital Gain 24 dBFS ISCP Short-circuit protection High-impedance output (1) 2.7 3.8 5.0 A VOVP Overvoltage protection threshold 22.9 V VUVP Undervoltage protection threshold -- 3.5 4.3 V tmin Output minimum pulse width No load 20 30 60 ns |
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