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AS6C4016 датащи(PDF) 7 Page - Alliance Semiconductor Corporation |
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AS6C4016 датащи(HTML) 7 Page - Alliance Semiconductor Corporation |
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7 / 12 page ![]() WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6) Notes : 1.WE#,CE#, LB#, UB# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 512K X 8 BIT LOW POWER CMOS SRAM January 2007 MARCH 2008 MARCH/2008, V 1.0 Alliance Memory Inc. Page 7 of 12 AS6C4016 256K X 16 BIT SUPER LOW POWER CMOS SRAM |
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