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AS6C4016 датащи(PDF) 7 Page - Alliance Semiconductor Corporation

номер детали AS6C4016
подробное описание детали  Fully static operation
PDF  12 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS6C4016 датащи(HTML) 7 Page - Alliance Semiconductor Corporation

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WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
Notes :
1.WE#,CE#, LB#, UB# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance
state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
512K X 8 BIT LOW POWER CMOS SRAM
January 2007
MARCH 2008
MARCH/2008, V 1.0
Alliance Memory Inc.
Page 7 of 12
AS6C4016
256K X 16 BIT SUPER LOW POWER CMOS SRAM



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