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AS6C1608 датащи(PDF) 8 Page - Alliance Semiconductor Corporation

номер детали AS6C1608
подробное описание детали  Fully static operation
PDF  13 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS6C1608 датащи(HTML) 8 Page - Alliance Semiconductor Corporation

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AS6C1608
Rev. 1.1
2048K X 8 BIT LOW POWER CMOS SRAM
Alliance Memory Inc.reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc.
551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
7
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
tWR
tAS
(4)
TOW
CE#
tAW
Address
tWC
CE2
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
CE#
tWR
tAS
tAW
Address
tWC
CE2
Notes :
1.WE#, CE# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#.
3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high
impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.



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