AS6C1608

Rev. 1.1

2048K X 8 BIT LOW POWER CMOS SRAM

Alliance Memory, Inc.

551 Taylor Way, Suite #1, San Carlos, CA 94070, USA

Tel: +1 650 610 6800 Fax: +1 650 620 9211

5

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

PARAMETER

SYM.

AS6C1608-55

AS6C1608-70

UNIT

MIN.

MAX.

MIN.

MAX.

Read Cycle Time

55

-

70

-

ns

Address Access Time

-

55

-

70

ns

Chip Enable Access Time

-

55

-

70

ns

Output Enable Access Time

-

30

-

35

ns

Chip Enable to Output in Low-Z

10

-

10

-

ns

Output Enable to Output in Low-Z

5

-

5

-

ns

Chip Disable to Output in High-Z

-

20

-

25

ns

Output Disable to Output in High-Z

-

20

-

25

ns

Output Hold from Address Change

10

-

10

-

ns

(2) WRITE CYCLE

PARAMETER

SYM.

AS6C1608-55

AS6C1608-70

UNIT

MIN.

MAX.

MIN.

MAX.

Write Cycle Time

55

-

70

-

ns

Address Valid to End of Write

50

-

60

-

ns

Chip Enable to End of Write

50

-

60

-

ns

Address Set-up Time

0

-

0

-

ns

Write Pulse Width

45

-

55

-

ns

Write Recovery Time

0

-

0

-

ns

Data to Write Time Overlap

25

-

30

-

ns

Data Hold from End of Write Time

0

-

0

-

ns

Output Active from End of Write

5

-

5

-

ns

Write to Output in High-Z

-

20

-

25

ns

*These parameters are guaranteed by device characterization, but not production tested.