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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AS6C1608 датащи(PDF) 7 Page - Alliance Semiconductor Corporation |
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AS6C1608 датащи(HTML) 7 Page - Alliance Semiconductor Corporation |
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7 / 13 page  AS6C1608 Rev. 1.1 2048K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 6 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) Dout Data Valid tOH tAA Address tRC Previous Data Valid READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5) Dout Data Valid tOH OE# High-Z High-Z tCLZ tOLZ tOE tCHZ tOHZ CE2 tACE CE# tAA Address tRC Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low., CE2 = high. 3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. |
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