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TP3094 датащи(PDF) 12 Page - National Semiconductor (TI) |
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TP3094 датащи(HTML) 12 Page - National Semiconductor (TI) |
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12 / 19 page ![]() 12 www.national.com Power Dissipation Amplitude Response Symbol Parameter Conditions Min Typ Max Units ICC0 Power down current (all channels down) Measured after having first achieved power-up state. MCLK=2.048MHz 0.9 1.5 mA ICC1 Power up active current (all channel active) No load, MCLK=2.048MHz 35 50 mA Absolute Levels Nominal 0dBm0 level is 0dBm at the analog inputs/outputs 0.7746 Vrms tmax Virtual decision value defined per ITU G.711 Max overload level 3.17dBm0 ( µ-law) 3.14dBm0 (A-law) 1.116 1.112 Vrms Vrms GXA Transmit gain, absolute TA=25 oC, V CC=5V, Input at VXI=0dBm0 at 1015.625Hz -0.15 0.15 dB GXAT/V Cumulative Transmit gain Variation with sup- plies and temperature ranges TA=0 oC to 70oC, V CC=5V±5%, TA=-40oC to +85oC, VCC=5V±5% Input at GXO=0dBm0 at 1015.625Hz -0.2 -0.3 0.2 0.3 dB dB GXR Transmit gain, relative to GXA f=16Hz f=50Hz f=60Hz f=200Hz f=300-3000Hz f=3300Hz f=3400Hz f=4000Hz f=4.6KHz and up (Note 2), measure response from 0 to 4000Hz -1.8 -0.15 -0.35 -0.7 -35 -30 -30 0 0.15 0.15 0 -14 -32 dB dB dB dB dB dB dB dB dB dB GXAL Transmit gain variation with level Sinusoidal test method, refer- ence level = -10dBm0 at VXI GXO=-40dBm0 to +3dBm0 GXO=-50dBm0 to -40dBm0 GXO=-55dBm0 to -50dBm0 -0.2 -0.4 -1.0 0.2 0.4 1.0 dB dB dB GRA Receive gain, absolute TA=25 oC, V CC=5V±5% Input PCM level at DR=0dBm0 at 1015.625Hz -0.15 0.15 dB GRAT/V Cumulative Receive gain Variation with supplies and temperature ranges TA=0 oC to 70oC, V CC=5V±5%, TA=-40 oC to 85oC, V CC=5V±5%, Input PCM level at DR=0dBm0 at 1015.625Hz -0.2 -0.3 0.2 0.3 dB GRR Receive gain, relative to GRA f=0-3000Hz f=3300Hz f=3400Hz f=4000Hz -0.15 -0.35 -0.7 0.15 0.15 0 -14 dB dB dB dB Electrical Characteristics (continued) |
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