STM32F101XF datasheet(78/117 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F101xF, STM32F101xG

78/117

DocID16553 Rev 5

5.3.12

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/JESD22-C101 standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

•

A supply overvoltage is applied to each power supply pin

•

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78 IC latch-up standard.

5.3.13

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product

operation. However, in order to give an indication of the robustness of the microcontroller in

cases when abnormal injection accidentally happens, susceptibility tests are performed on a

sample basis during device characterization.

Functional susceptibilty to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (>5

LSB TUE), out of spec current injection on adjacent pins or other functional failure (for

example reset, oscillator frequency deviation).

Table 44. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Guaranteed by characterization results.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming to

JESD22-A114

2000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = +25 °C, conforming to

JESD22-C101

III

500

Table 45. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +85 °C conforming to JESD78A

II level A

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