STM32F048G6 datasheet(43/98 Pages) STMICROELECTRONICS

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STM32F048C6 STM32F048G6 STM32F048T6

Electrical characteristics

6.3.3

Embedded reference voltage

The parameters given in Table 22 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 20: General operating

conditions

6.3.4

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 10: Current consumption

measurement scheme

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

Table 21. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

Table 22. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage –40 °C < TA < +105 °C

1.2

1.23

1.25

tSTART

ADC_IN17 buffer startup

time

10(1)

µs

tS_vrefint

ADC sampling time when

reading the internal

reference voltage

4(1)

1. Guaranteed by design, not tested in production.

µs

∆VREFINT

Internal reference voltage

spread over the

temperature range

VDDA = 3 V

10(1)

TCoeff

Temperature coefficient

- 100(1)

100(1) ppm/°C

TVREFINT_RDY

(2)

2. Guaranteed by design, not tested in production. This parameter is the latency between the time when pin

NPOR is set to 1 by the application and the time when the VREFINTRDYF status bit is set to 1 by the

hardware.

Internal reference voltage

temporization

1.5

2.5

4.5

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