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STM32F048G6 датащи(PDF) 42 Page - STMicroelectronics |
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STM32F048G6 датащи(HTML) 42 Page - STMicroelectronics |
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42 / 98 page ![]() Electrical characteristics STM32F048C6 STM32F048G6 STM32F048T6 42/98 DocID026007 Rev 6 6.3 Operating conditions 6.3.1 General operating conditions 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 21 are derived from tests performed under the ambient temperature condition summarized in Table 20. Table 20. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 48 MHz fPCLK Internal APB clock frequency - 0 48 VDD Standard operating voltage - 1.65 1.95 V VDDIO2 I/O supply voltage Must not be supplied if VDD is not present 1.65 3.6 V VDDA Analog operating voltage (ADC not used) Must have a potential equal to or higher than VDD VDD 3.6 V Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage - 1.65 3.6 V VIN I/O input voltage TC and RST I/O –0.3 VDDIOx+0.3 V TTa and POR I/O –0.3 VDDA+0.3(1) FT and FTf I/O –0.3 5.2(1) PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(2) UFQFPN48 - 606 mW WLCSP36 - 313 UFQFPN28 - 170 TA Ambient temperature for the suffix 6 version Maximum power dissipation –40 85 °C Low power dissipation(3) –40 105 Ambient temperature for the suffix 7 version Maximum power dissipation –40 105 °C Low power dissipation(3) –40 125 TJ Junction temperature range Suffix 6 version –40 105 °C Suffix 7 version –40 125 1. For operation with a voltage higher than VDDIOx + 0.3 V, the internal pull-up resistor must be disabled. 2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. See Section 7.4: Thermal characteristics. 3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.4: Thermal characteristics ). |
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