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STM32F048G6 датащи(PDF) 53 Page - STMicroelectronics |
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STM32F048G6 датащи(HTML) 53 Page - STMicroelectronics |
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53 / 98 page ![]() DocID026007 Rev 6 53/98 STM32F048C6 STM32F048G6 STM32F048T6 Electrical characteristics 83 6.3.5 Wakeup time from low-power mode The wakeup times given in Table 30 are the latency between the event and the execution of the first user instruction. The device goes in low-power mode after the WFE (Wait For Event) instruction, in the case of a WFI (Wait For Interruption) instruction, 16 CPU cycles must be added to the following timings due to the interrupt latency in the Cortex M0 architecture. The SYSCLK clock source setting is kept unchanged after wakeup from Sleep mode. During wakeup from Stop mode, SYSCLK takes the default setting: HSI 8 MHz. The wakeup source from Sleep and Stop mode is an EXTI line configured in event mode. All timings are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 20: General operating conditions. 6.3.6 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The external clock signal has to respect the I/O characteristics in Section 6.3.13. However, the recommended clock input waveform is shown in Figure 11: High-speed external clock source AC timing diagram . Table 30. Low-power mode wakeup timings Symbol Parameter Typ @ VDDA Max Unit = 1.8 V = 3.3 V tWUSTOP Wakeup from Stop mode 3.5 2.8 5.3 µs tWUSLEEP Wakeup from Sleep mode 4 SYSCLK cycles - µs Table 31. High-speed external user clock characteristics Symbol Parameter(1) 1. Guaranteed by design, not tested in production. Min Typ Max Unit fHSE_ext User external clock source frequency - 8 32 MHz VHSEH OSC_IN input pin high level voltage 0.7 VDDIOx -VDDIOx V VHSEL OSC_IN input pin low level voltage VSS - 0.3 VDDIOx tw(HSEH) tw(HSEL) OSC_IN high or low time 15 - - ns tr(HSE) tf(HSE) OSC_IN rise or fall time - - 20 |
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