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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151F3 датащи(PDF) 76 Page - STMicroelectronics |
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STM8L151F3 датащи(HTML) 76 Page - STMicroelectronics |
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76 / 122 page  Electrical parameters STM8L151x2, STM8L151x3 76/122 DocID018780 Rev 9 Figure 18. Typical HSI frequency vs VDD Low speed internal RC oscillator (LSI) In the following table, data is based on characterization results, not tested in production. Table 33. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency - 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time - - - 200(2) 2. Guaranteed by design. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 - 11 % |
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