STM8L151F3 datasheet(61/122 Pages) STMICROELECTRONICS

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STM8L151F3 датащи(PDF) 61 Page - STMicroelectronics

номер детали	STM8L151F3

подробное описание детали	Reset and supply management

PDF	122 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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61 / 122 page

DocID018780 Rev 9

61/122

STM8L151x2, STM8L151x3

Electrical parameters

102

Figure 12. Typ. IDD(RUN) vs. VDD, fCPU = 16 MHz

1. Typical current consumption measured with code executed from RAM

4. The run from RAM consumption can be approximated with the linear formula:

IDD(run_from_RAM) = Freq * 90 µA/MHz + 380 µA

5. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption

(IDD HSE) must be added. Refer to Table 30.

6. Tested in production.

7. The run from Flash consumption can be approximated with the linear formula:

IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA

8. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption

(IDD LSE) must be added. Refer to Table 31.

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