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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151F3 датащи(PDF) 56 Page - STMicroelectronics |
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STM8L151F3 датащи(HTML) 56 Page - STMicroelectronics |
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56 / 122 page  Electrical parameters STM8L151x2, STM8L151x3 56/122 DocID018780 Rev 9 Table 15. Current characteristics Symbol Ratings Max. Unit IVDD Total current into VDD power line (source) 80 mA IVSS Total current out of VSS ground line (sink) 80 IIO Output current sunk by IR_TIM pin (with high sink LED driver capability) 80 Output current sunk by any other I/O and control pin 25 Output current sourced by any I/Os and control pin - 25 IINJ(PIN) Injected current on true open-drain pins (PC0 and PC1)(1) - 5 / +0 mA Injected current on 3.6 V tolerant pins (1) - 5 / +0 Injected current on any other pin (1) 1. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be exceeded. Refer to Table 14. for maximum allowed input voltage values. - 5 / +5 ΣIINJ(PIN) Total injected current (sum of all I/O and control pins) (2) 2. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). ± 25 mA Table 16. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range -65 to +150 ° C TJ Maximum junction temperature 150 |
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