LQFP100 datasheet(68/116 Pages) STMICROELECTRONICS

68 / 116 page

Package pinouts and signal descriptions

SPC560B40x/50x, SPC560C40x/50x

68/116

DocID14619 Rev 13

3.19

Flash memory electrical characteristics

3.19.1

Program/Erase characteristics

Table 29 shows the program and erase characteristics.

ECC circuitry provides correction of single bit faults and is used to improve further

automotive reliability results. Some units will experience single bit corrections throughout

the life of the product with no impact to product reliability.

Table 29. Program and erase specifications

Symbol

Parameter

Value

Unit

Min

Typ(1)

Initial

max(2)

Max(3)

Tdwprogram

CC C

Double word (64 bits) program time(4)

—

500

µs

T16Kpperase

16 KB block preprogram and erase time

—

300

500

5000

T32Kpperase

32 KB block preprogram and erase time

—

400

600

5000

T128Kpperase

128 KB block preprogram and erase time

—

800

1300

7500

Tesus

CC D Erase suspend latency

—

µs

Typical program and erase times assume nominal supply values and operation at 25 °C.

Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values

are characterized but not guaranteed.

Actual hardware programming times. This does not include software overhead.

Table 30. Flash module life

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

P/E

CC C

Number of program/erase cycles

per block over the operating

temperature range (TJ)

16 KB blocks

100000

—

cycles

32 KB blocks

10000

100000

—

128 KB blocks

1000

100000

—

Retention CC C

Minimum data retention at 85 °C

average ambient temperature(1)

Blocks with

0–1000 P/E cycles

—

years

Blocks with

1001–10000 P/E cycles

—

Blocks with

10001–100000 P/E cycles

5—

—

Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature

range.

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