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SCANPSC110FDMQB датащи(PDF) 19 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали SCANPSC110FDMQB
подробное описание детали  SCAN Bridge Hierarchical and Multidrop Addressable JTAG Port (IEEE1149.1 System Test Support)
PDF  29 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

SCANPSC110FDMQB датащи(HTML) 19 Page - National Semiconductor (TI)

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DC Electrical Characteristics (Continued)
Symbol
Parameter
V
CC
(V)
Military
Units
Conditions
T
A =
−55˚C to +125˚C
Guaranteed
Limits
I
IN (OE,
Maximum Input
5.5
±1.0
µA
V
IN = VCC or
TCK
B,S(0–5))
Leakage Current
V
IN = GND
I
IN, MAX
Maximum Input
V
IN = VCC
(TRST, TDI
Ln,
Leakage Current
5.5
3.7
µA
TDI
B, TMSB)
I
IN, MAX
Maximum Input
V
IN = GND
(TRST, TDI
Ln,
Leakage Current
5.5
−385
µA
TDI
B, TMSB)
I
IN, MIN
Minimum Input
V
IN = GND
(TDI
B, TMSB,
Leakage Current
5.5
−160
µA
TRST, TDI
Ln)
I
CCT
Maximum
I
CC/Input
5.5
1.6
mA
V
IN = VCC −2.1V
I
CCT
Maximum
V
IN = VCC −2.1V
(TDI
B, TMSB,ICC/Input
5.5
1.75
mA
Test one at a time
TRST, TDI
L)
with others floating
I
CC
Maximum
Quiescent
5.5
168
µA
TDI
B, TMSB, TRST,
Supply Current
TDI
L = VCC
I
CC, MAX
Maximum
Quiescent
5.5
2.5
mA
TDI
B, TMSB, TRST,
Supply Current
TDI
L = GND
I
OLD
Minimum
V
OLD = 1.65V max
(TCK
Ln, TMSLn,
Dynamic
5.5
50
mA
V
IN (OE) = VIL
TDO
Ln)
Output Current
(Note 6)
I
OLD
Minimum
V
OLD = 0.8V
(TDO
B)
Dynamic
5.5
63
mA
V
IN (TRST) = VIH
Output Current
(Note 6)
I
OHD
Minimum
V
OHD = 3.85V max
(TCK
Ln, TMSLn,
Dynamic
5.5
−50
mA
(Note 6)
TDO
Ln)
Output Current
I
OHD
Minimum Dynamic
V
OHD = 2.0V max
(TDO
B)
Output Current
5.5
−27
mA
(Note 6)
I
OZ
Maximum
V
IN (OE) = VIH
TRI-STATE®
5.5
±10.0
µA
V
IN (TRST) = VIL
Leakage Current
V
O = VCC, GND
I
OS
Output Short
5.5
−100
mA
V
O = 0.0V
(TDO
B)
Circuit Current
min
(Note 7)
Note 6: Maximum test duration of 2 ms. One output loaded at a time.
Note 7: Maximum test duration not to exceed 1 second.
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