STF5N105K5

Electrical characteristics

DocID026702 Rev 5

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Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain

current

-

3

A

Source-drain

current (pulsed)

-

12

A

VSD(1)

Forward on

voltage

-

1.5

V

Reverse recovery

time

di/dt = 100 A/µs,

Figure 17: " Test circuit for inductive

load switching and diode recovery

times"

-

400

ns

Reverse recovery

charge

-

2.3

µC

Reverse recovery

current

-

12

A

Reverse recovery

time

di/dt=100 A/µs,

Tj=150 °C

Figure 17: " Test circuit for inductive

load switching and diode recovery

times"

-

560

ns

Reverse recovery

charge

-

3.1

µC

Reverse recovery

current

-

11

A

Notes:

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes have specifically been designed to enhance the

device's ESD capability. In this respect the Zener voltage is appropriate to achieve an

efficient and cost-effective intervention to protect the device's integrity. These integrated

Zener diodes thus avoid the usage of external components.