STF5N105K5 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STF5N105K5

4/14

DocID026702 Rev 5

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 1 mA

1050

IDSS

Zero gate voltage drain

current

VGS = 0, VDS = 1050 V

µA

VGS = 0, VDS = 1050 V,

Tc=125 °C

µA

IGSS

Gate body leakage current

VDS = 0, VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 1.5 A

2.9

3.5

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS=0, VDS =100 V,

f=1 MHz

210

Coss

Output capacitance

Crss

Reverse transfer capacitance

0.5

Co(tr)(1)

Equivalent capacitance time

VGS = 0, VDS = 0 to 840 V

Co(er)(2)

Equivalent capacitance

energy related

Intrinsic gate resistance

f = 1MHz open drain

Total gate charge

VDD = 840 V, ID = 3 A

VGS =10 V

Figure 16: "Gate charge

test circuit"

12.5

Qgs

Gate-source charge

Qgd

Gate-drain charge

9.5

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VDD = 525V, ID = 1.5 A, RG

=4.7 Ω,

VGS=10 V

Figure 18: " Unclamped inductive load

test circuit"

15.5

Rise time

8.5

td(off)

Turn-off delay

time

Fall time

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