STF5N105K5

Electrical ratings

DocID026702 Rev 5

3/14

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate- source voltage

± 30

V

3 (1)

A

2 (1)

A

IDM (2)

Drain current (pulsed)

12

A

25

W

Max current during repetitive or single pulse avalanche

1

A

Single pulse avalanche energy

85

mJ

Insulation withstand voltage (RMS) from all three leads to external heat

2500

V

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

V/ns

Operating junction temperature

- 55 to

150

°C

Storage temperature

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

5

°C/W

Thermal resistance junction-amb max

62.5

°C/W