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STM32L151x8 датащи(PDF) 53 Page - STMicroelectronics |
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STM32L151x8 датащи(HTML) 53 Page - STMicroelectronics |
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53 / 133 page ![]() DocID17659 Rev 12 53/133 STM32L151x6/8/B STM32L152x6/8/B Electrical characteristics 104 6.3 Operating conditions 6.3.1 General operating conditions Table 12. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –65 to +150 °C TJ Maximum junction temperature 150 °C Table 13. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 32 MHz fPCLK1 Internal APB1 clock frequency - 0 32 fPCLK2 Internal APB2 clock frequency - 0 32 VDD Standard operating voltage BOR detector disabled 1.65 3.6 V BOR detector enabled, at power on 1.8 3.6 BOR detector disabled, after power on 1.65 3.6 VDDA(1) Analog operating voltage (ADC and DAC not used) Must be the same voltage as VDD(2) 1.65 3.6 V Analog operating voltage (ADC or DAC used) 1.8 3.6 VIN Input voltage on FT pins(3) Input voltage on BOOT0 pin Input voltage on any other pin 2.0 V ≤VDD ≤ 3.6 V 1.65 V ≤ VDD ≤ 2.0 V –0.3 –0.3 0 –0.3 5.5 5.25 5.5 VDD+0.3 V PD Power dissipation at TA = 85 °C(4) BGA100 package - 339 mW TA Temperature range Maximum power dissipation –40 85 °C Low power dissipation(5) –40 105 TJ Junction temperature range -40 °C ≤TA ≤105°C –40 105 °C 1. When the ADC is used, refer to Table 54: ADC characteristics. 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 3. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled. 4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 12: Thermal characteristics on page 53). 5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJ max (see Table 12: Thermal characteristics on page 53). |
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