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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LSM6DS0 датащи(PDF) 12 Page - STMicroelectronics |
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LSM6DS0 датащи(HTML) 12 Page - STMicroelectronics |
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12 / 59 page  Module specifications LSM6DS0 12/59 DocID025604 Rev 3 2.2 Electrical characteristics @ Vdd = 2.2 V, T = 25 °C unless otherwise noted Table 4. Electrical characteristics 2.2.1 Recommended power-up sequence For the power-up sequence please refer to the following figure, where: Trise is the time for the power supply to rise from 10% to 90% of its final value Twait is the time delay between the end of the Vdd_IO ramp (90% of its final value) and the start of the Vdd ramp Figure 2. Recommended power-up sequence Symbol Parameter Test conditions Min. Typ.(1) Max. Unit Vdd Supply voltage 1.71 3.6 V Vdd_IO Power supply for I/O 1.71 Vdd + 0.1 V LA_Idd Accelerometer current consumption in normal mode ODR = 10 Hz 60 μA ODR = 50 Hz 160 ODR 119 Hz 330 G_Idd Gyroscope current consumption in normal mode 4.0 mA Top Operating temperature range -40 +85 °C Trise Time for power supply rising(2) 0.01 100 ms Twait Time delay between Vdd_IO and Vdd (2) 010 ms 1. Typical specifications are not guaranteed. 2. Please refer to Section 2.2.1: Recommended power-up sequence for more details. Trise Twait Trise 0V 0V Vdd_IO Vdd |
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