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SST25WF080B датащи(PDF) 15 Page - Microchip Technology |
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SST25WF080B датащи(HTML) 15 Page - Microchip Technology |
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15 / 39 page ![]() 2014 Microchip Technology Inc. DS20005164C-page 15 SST25WF080B 5.8 Chip-Erase The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction is ignored if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence. Initiate the Chip- Erase instruction by executing an 8-bit command, 60H or C7H. CE# must be driven high before the instruction is executed. Poll the BUSY bit in the Software Status reg- ister, or wait TSCE, for the completion of the internal self-timed Chip-Erase cycle. See Figure 5-8 for the Chip-Erase sequence and Figure 6-10 for the flow chart. FIGURE 5-8: CHIP-ERASE SEQUENCE 5.9 Read-Status-Register (RDSR) The Read-Status-Register (RDSR) instruction, 05H, allows reading of the status register. The status register may be read at any time even during a Write (Program/ Erase) operation. When a Write operation is in prog- ress, the Busy bit may be checked before sending any new commands to assure that the new commands are properly received by the device. CE# must be driven low before the RDSR instruction is entered and remain low until the status data is read. Read-Status-Register is continuous with ongoing clock cycles until it is termi- nated by a low to high transition of the CE#. See Figure 5-9 for the RDSR instruction sequence. FIGURE 5-9: READ-STATUS-REGISTER (RDSR) SEQUENCE CE# SO SI SCK 01 2 3 4 5 6 7 60 or C7 HIGH IMPEDANCE MODE 0 MODE 3 25164 F16.0 MSB 0 1 2 3 4 5 6 7 8 101112 13 14 25164 F17.0 MODE 3 SCK SI SO CE# Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 05 MODE 0 HIGH IMPEDANCE Status Register Out MSB MSB |
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