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SST25WF080B датащи(PDF) 14 Page - Microchip Technology |
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SST25WF080B датащи(HTML) 14 Page - Microchip Technology |
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14 / 39 page ![]() SST25WF080B DS20005164C-page 14 2014 Microchip Technology Inc. 5.6 Sector-Erase The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H or D7H, followed by address bits [A23-A0]. Address bits [AMS-A12] (AMS = Most Significant address) are used to deter- mine the sector address (SAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. Poll the BUSY bit in the Soft- ware Status register, or wait TSE, for the completion of the internal self-timed Sector-Erase cycle. See Figure 5-6 for the Sector-Erase sequence and Figure 6-9 for the flow chart. FIGURE 5-6: SECTOR-ERASE SEQUENCE 5.7 64-KByte Block-Erase The 64-KByte Block-Erase instruction clears all bits in the selected 64 KByte block to FFH. Applying this instruction to a protected memory area results in the instruction being ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com- mand sequence. Initiate the 64-Byte Block-Erase instruction by execut- ing an 8-bit command, D8H, followed by address bits [A23-A0]. Address bits [AMS-A16] (AMS = Most Signifi- cant Address) determine the block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before executing the instruction. Poll the Busy bit in the software status register or wait TBE for the com- pletion of the internal self-timed Block-Erase cycle. See Figure 5-7 for the 64-KByte Block-Erase sequences and Figure 6-9 for the flow chart. FIGURE 5-7: 64-KBYTE BLOCK-ERASE SEQUENCE CE# SO SI SCK ADD. 01 2 3 4 5 6 7 8 ADD. ADD. 20 or D7 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 25164 F13.0 MSB MSB CE# SO SI SCK ADDR 01 2 3 4 5 6 7 8 ADDR ADDR D8 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 25164 F15.0 MSB MSB |
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