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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SST39VF401C датащи(PDF) 1 Page - Microchip Technology |
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SST39VF401C датащи(HTML) 1 Page - Microchip Technology |
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1 / 38 page  ©2014 Silicon Storage Technology, Inc. DS20005053B 04/14 Data Sheet www.microchip.com 4 Mbit (x16) Multi-Purpose Flash Plus SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C Features • Organized as 256K x16 • Single Voltage Read and Write Operations – 2.7-3.6V for SST39VF401C/402C – 3.0-3.6V for SST39LF401C/402C • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 5 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical) • Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 8 KWord) – Bottom Block-Protection (bottom 8 KWord) • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Flexible block architecture; one 8-, two 4-, one 16-, and seven 32-KWord blocks • Chip-Erase Capability • Erase-Suspend/Erase-Resume Capabilities • Hardware Reset Pin (RST#) • Latched Address and Data • Security-ID Feature – 128 bits; User: 128 words • Fast Read Access Time: – 70 ns for SST39VF401C/402C – 55 ns for SST39LF401C/402C • Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 µs (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bits – Data# Polling – Ready/Busy# Pin • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) – 48-ball WFBGA (4mm x 6mm) • All devices are RoHS compliant SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C are 256K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high per- formance CMOS SuperFlash® technology. The split-gate cell design and thick- oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. SST39LF401C/402C write (Program or Erase) with a 3.0-3.6V power supply. SST39VF401C/402C write with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x16 memories. |
Аналогичный номер детали - SST39VF401C |
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Аналогичное описание - SST39VF401C |
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