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TLE7186F датащи(PDF) 16 Page - Infineon Technologies AG

номер детали TLE7186F
подробное описание детали  System IC for B6 motor drives
PDF  39 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7186F датащи(HTML) 16 Page - Infineon Technologies AG

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Data Sheet
16
Rev. 1.2, 2016-01-28
TLE7186F
Shunt Signal Conditioning
6
Shunt Signal Conditioning
The TLE7186F incorporates a fast and precise operational amplifier for conditioning and amplification of the
current sense shunt signal. The gain of the OpAmp is adjustable by external resistors within a range higher than 5.
The usage of higher gains in the application might be limited by required settling time and band width.
It is recommended to apply a small offset to the OpAmp, to avoid operation close to the lower rail at low currents.
The output of the OpAmp ISO is not short-circuit proof.
In addition to the integrated operational amplifier, the TLE7186F incorporates a comparator to detect over current
situations. The output voltage
V
ISO is compared to a reference voltage VOCTH close to the upper rail of the 5V
OpAmp supply (VDD). If
V
ISO reaches this level an error is set.
Figure 5
Shunt Signal Conditioning Block Diagram and Over Current Limitation
Over current shut down see Chapter 9.2.13.
6.1
Electrical Characteristics
Electrical Characteristics - Current sense signal conditioning
V
S = 6.0 to 33 V, Tj = -40 °C to +150 °C, gain = 5 to 75, all voltages with respect to ground, positive current flowing
into pin (unless otherwise specified)1)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Typ.
Max.
6.1.1
Series resistors
R
S
100
500
1000
Ω
–
6.1.2
Feedback resistor
R
fb
2000
7500
–
Ω
–
6.1.3
Resistor ratio (gain ratio),
max. gain limited by settling time
R
fb/RS
5–
––
R
L>3kΩ
6.1.4
Input differential voltage (ISP - ISN)
V
IDR
-800
–
800
mV
–
6.1.5
Input voltage (Both Inputs - GND)
(ISP - GND) or (ISN -GND)
V
LL
-800
–
2000
mV
–
6.1.6
Input offset voltage of the I-DC link
OpAmp, including temperature drift
V
IO
––
+/-2
mV
R
S=500Ω; VCM=0V;
V
ISO=1.65V;
6.1.7
Input bias current (ISN,ISP to
GND)
I
IB
-300
–
–
µA
V
CM=0V; VISO=open
external
RS1
RS2
ASIC
internal
-
+
VOCTH
ERR
Rfb2
Rfb1
Rshunt
VDD
Rfb3
ISN
ISP
ISO
VDD
-
+
Rfb2 Rfb3 = Rfb1
µC
fc < 1 Mhz
330pF



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