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TLE7186F датащи(PDF) 13 Page - Infineon Technologies AG |
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TLE7186F датащи(HTML) 13 Page - Infineon Technologies AG |
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13 / 39 page ![]() TLE7186F MOSFET Driver Data Sheet 13 Rev. 1.2, 2016-01-28 5.3 Bootstrap Principle The TLE7186F provides a bootstrap based supply for its high side output stages. The benefit of this principle is a fast switching of the high side switches - supporting active freewheeling in high side. The bootstrap capacitors are charged by switching on the external low side MOSFETs connecting the bootstrap capacitor to GND. Under this condition the bootstrap capacitor will be charged from the VREG capacitor. If the low side MOSFET is switched off and the high side MOSFET is switched on, the bootstrap capacitor will float together with the SHx voltage to the supply voltage of the bridge. Under this condition the supply current of the high side output stage will discharge the bootstrap capacitor. This current is specified. The size of the capacitor together with this current will determine how long the high side MOSFET can be kept on without recharging the bootstrap capacitor. When all external MOSFETs are switched off, the SHx voltage can be undefined. Under this condition, the bootstrap capacitors can be discharged, dependent on the SHx voltage. 5.4 Currents at SH pins The currents at the SH pins can be used for diagnostic purposes to check the health state of the power stage. The simplified structure related to the SH currents the TLE7186F is described by Figure 4. Figure 4 Block Diagram of SHx pin configuration 5.5 Electrical Characteristics Electrical Characteristics MOSFET Drivers V S = 7.0 to 33 V, Tj = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)1) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Inputs 5.5.1 Low level input voltage of ILx; IHx V I_LL –– 1.6 V – 5.5.2 High level input voltage of ILx; IHx V I_HL 2.8 ––V – 5.5.3 Input hysteresis of IHx; ILx2) d VI 100 ––mV – 5.5.4 IHx pull-up resistors to VDD R IH 28.5 – 76.5 k Ω – 5.5.5 ILx pull-down resistors to GND R IL 178.5 – 564 k Ω – VDH SHx IBSH SL RSHGN BHx 40µA 80k Ω |
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