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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F334X4 датащи(PDF) 74 Page - STMicroelectronics |
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STM32F334X4 датащи(HTML) 74 Page - STMicroelectronics |
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74 / 115 page  Electrical characteristics STM32F334x4 STM32F334x6 STM32F334x8 74/115 DocID025409 Rev 5 All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 18 and Figure 19 for standard I/Os. Figure 18. TC and TTa I/O input characteristics - CMOS port Vhys Schmitt trigger hysteresis TT, TC and TTa I/O - 200 (1) - mV FT and FTf I/O - 100 (1) - BOOT0 - 300 (1) - Ilkg Input leakage current (3) TC, FT, TT, FTf and TTa I/O in digital mode VSS ≤VIN ≤VDD -- ±0.1 µA TTa I/O in digital mode VDD ≤VIN ≤VDDA -- 1 TTa I/O in analog mode VSS ≤VIN ≤VDDA -- ±0.2 FT and FTf I/O(4) VDD ≤VIN ≤5 V -- 10 RPU Weak pull-up equivalent resistor(5) VIN = VSS 25 40 55 k Ω RPD Weak pull-down equivalent resistor(5) VIN = VDD 25 40 55 k Ω CIO I/O pin capacitance - - 5 - pF 1. Data based on design simulation. 2. Tested in production. 3. Leakage could be higher than the maximum value. if negative current is injected on adjacent pins. Refer to Table 49: I/O current injection susceptibility. 4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order). Table 50. I/O static characteristics (continued) Symbol Parameter Conditions Min. Typ. Max. Unit |
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