STM32F334X4 datasheet(70/115 Pages) STMICROELECTRONICS

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Electrical characteristics

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6.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

6.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 45. They are based on the EMS levels and classes

defined in application note AN1709.

Table 43. Flash memory characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time TA = –40 to +105 °C

53.5

µs

tERASE Page (2 KB) erase time

TA = –40 to +105 °C

tME

Mass erase time

TA = –40 to +105 °C

IDD

Supply current

Write mode

Erase mode

Table 44. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min.(1)

1. Data based on characterization results, not tested in production.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

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