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IPS65R650CE датащи(PDF) 1 Page - Infineon Technologies AG

номер детали IPS65R650CE
подробное описание детали  650V CoolMOS짧 CE Power Transistor
PDF  14 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPS65R650CE датащи(HTML) 1 Page - Infineon Technologies AG

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1
IPS65R650CE
Rev.2.0,2016-02-25
Final Data Sheet
tab
IPAKSL
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
650
m
Ω
ID.
10.1
A
Qg.typ
23
nC
ID,pulse
18
A
Eoss@400V
2
µJ
Type/OrderingCode
Package
Marking
RelatedLinks
IPS65R650CE
PG-TO 251
65S650CE
see Appendix A


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