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IPS65R650CE датащи(PDF) 3 Page - Infineon Technologies AG

номер детали IPS65R650CE
подробное описание детали  650V CoolMOS짧 CE Power Transistor
PDF  14 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPS65R650CE датащи(HTML) 3 Page - Infineon Technologies AG

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3
650VCoolMOSªCEPowerTransistor
IPS65R650CE
Rev.2.0,2016-02-25
Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Continuous drain current
1)
ID
-
-
-
-
10.1
6.4
A
TC=25°C
TC=100°C
Pulsed drain current
2)
ID,pulse
-
-
18
A
TC=25°C
Avalanche energy, single pulse
EAS
-
-
142
mJ
ID=1.3A; VDD=50V; see table 11
Avalanche energy, repetitive
EAR
-
-
0.21
mJ
ID=1.3A; VDD=50V; see table 11
Avalanche current, repetitive
IAR
-
-
1.3
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-252
Ptot
-
-
86
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
7.1
A
TC=25°C
Diode pulse current
2)
IS,pulse
-
-
18
A
TC=25°C
Reverse diode dv/dt
3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Maximum diode commutation speed
dif/dt
-
-
500
A/
µs VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG



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