 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IPS65R650CE датащи(PDF) 5 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
IPS65R650CE датащи(HTML) 5 Page - Infineon Technologies AG |
|
|
5 / 14 page  5 650VCoolMOSªCEPowerTransistor IPS65R650CE Rev.2.0,2016-02-25 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.21mA Zero gate voltage drain current IDSS - - - 10 1 - µA VDS=650,VGS=0V,Tj=25°C VDS=650,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 0.54 1.40 0.65 - Ω VGS=10V,ID=2.1A,Tj=25°C VGS=10V,ID=2.1A,Tj=150°C Gate resistance RG - 10.5 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 440 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 30 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) - 21 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related 2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8 Ω;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8 Ω;seetable10 Turn-off delay time td(off) - 64 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8 Ω;seetable10 Fall time tf - 11 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8 Ω;seetable10 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.75 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate to drain charge Qgd - 12 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate charge total Qg - 23 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=480V,ID=3.2A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
