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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HV7321 датащи(PDF) 7 Page - Microchip Technology |
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HV7321 датащи(HTML) 7 Page - Microchip Technology |
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7 / 30 page  2016 Microchip Technology Inc. DS20005639A-page 7 HV7321 TX Output P-Channel MOSFET on VPP1 On-Resistance at PWS = 1 RON_P1 —16 21 Ω ISD = 100 mA On-Resistance at PWS = 0 — 33 43 Peak Output Current at PWS = 1 (1) IOUT_P1 0.8 1.0 — A VPP0,1 = +25V, RL = 1.0Ω to GND 1.5 1.75 — VPP0,1= +80V, RL = 1.0Ω to GND Peak Output Current at PWS = 0 (1) 0.4 0.5 — VPP0,1 = +25V, RL = 1.0Ω to GND 0.8 0.95 — VPP0,1 = +80V, RL = 1.0Ω to GND TX Output N-Channel MOSFET on VNN0 On-Resistance RON_N0 —8 10 Ω ISD = 100 mA Peak Output Current (1) IOUT_N0 -1.4 -1.7 — A VNN0 = -25V, RL = 1.0Ω to GND -2.0 -2.3 — A VNN0 = -80V, RL = 1.0Ω to GND TX Output N-Channel MOSFET on VNN1 On-Resistance at PWS = 1 RON_N1 —11 13 Ω ISD = 100 mA On-Resistance at PWS = 0 — 36 45 Peak Output Current at PWS = 1 (1) IOUT_N1 — -1.2 -1.0 A VNN0,1 = -25V, RL = 1.0Ω to GND — -1.6 -1.3 VNN0,1 = -80V, RL = 1.0Ω to GND Peak Output Current at PWS = 0 (1) — -0.4 -0.3 VNN0,1 = -25V, RL = 1.0Ω to GND — -0.55 -0.4 VNN0,1= -80V, RL = 1.0Ω to GND TX Damping P-Channel MOSFET on GND On-Resistance RON_PDMP —7.0 16 Ω ISD = 100 mA Peak Output Current (1) IOUT_PDMP 2.3 2.7 — A RL = 1.0Ω from -25V to TX 2.3 2.8 — A RL = 1.0Ω from -80V to TX TX Damping N-Channel MOSFET on GND On-Resistance RON_NDMP —7.0 16 Ω ISD = 100 mA Peak Output Current (1) IOUT_NDMP — -2.0 -1.8 A RL = 1.0Ω from +25V to TX — -2.3 -2.0 A RL = 1.0Ω from +80V to TX RTZSW Auto Bleed High-Voltage Analog Switch RTZSW On-Resistance (1) RRTZSW — 238 270 Ω ISD = ±1.0 mA RTZSW Off Withstand Voltage (1) VRTZSW -80 — +80 V ISW = ±100 μA TX OUTPUT Isolation Diodes and Bleed Resistor Diode Forward Voltage VF —0.96 1.9 V IFM = 300 mA, Note 1 Forward Continuous Current IFM — 300 — mA Note 2 Peak Forward Pulse Current IFSM — 3.0 — A PW = 50 ns, Note 2 Total Capacitance of 2-diode CT — 3.5 — pF at 1 MHz, 1 dBm, 0V DC, Note 2 TX/RX Bleed Resistor to GND Rb 11 15 20 kΩ Note 1 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical specifications: VLL = +2.5V, VDD = +5.0V, VPP0,1 = +80V, VNN0,1,2 = -80V, VGP = +10V, VGN = -10V, VSUB = 0V, PWS = OEN = REN = 1, TA = 25°C, unless otherwise specified. Parameters in Bold apply over the operating temperature range of T A = TJ = 0 to +85°C. Parameter Sym. Min. Typ. Max. Unit Conditions Note 1: Characterized only; not 100% tested in production. 2: Design guidance only. |
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