D

G

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0.77 mm

0.35 mm

1.53 mm

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD17585F5

SLPS610 – OCTOBER 2016

CSD17585F5 30-V N-Channel FemtoFET™ MOSFET

1

1 Features

1

•

Low On Resistance

•

•

Ultra-Small Footprint

–

1.53 mm × 0.77 mm

•

Low Profile

–

0.35-mm Height

•

Integrated ESD Protection Diode

–

Rated > 4-kV HBM

–

Rated > 2-kV CDM

•

Lead and Halogen Free

•

RoHS Compliant

2 Applications

•

Optimized for Industrial Load Switch Applications

•

Optimized for General Purpose Switching

Applications

3 Description

This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET

technology is designed and optimized to minimize the

footprint in many handheld and mobile applications.

This technology is capable of replacing standard

small signal MOSFETs while providing a significant

reduction in footprint size.

.

.

.

.

.

.

Product Summary

TYPICAL VALUE

UNIT

Drain-to-Source Voltage

30

V

Gate Charge Total (4.5 V)

1.9

nC

Gate Charge Gate-to-Drain

0.39

nC

Drain-to-Source On Resistance

26

m

Ω

22

Threshold Voltage

1.3

V

.

Device Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD17585F5

3000

7-Inch Reel

Femto

1.53-mm × 0.77-mm

SMD Lead Less

Tape

and

Reel

CSD17585F5T

250

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

VALUE

UNIT

Drain-to-Source Voltage

30

V

Gate-to-Source Voltage

+20

V

Continuous Drain Current(1)

3.6

A

Continuous Drain Current(2)

5.9

Pulsed Drain Current(1)(3)

34

A

Power Dissipation(1)

0.5

W

Power Dissipation(2)

1.4

Human-Body Model (HBM)

4

kV

Charged-Device Model (CDM)

2

Operating Junction,

Storage Temperature

–55 to 150

°C

(3) Pulse duration

≤ 100 μs, duty cycle ≤ 1%.

Typical Part Dimensions

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