CSD17585F5 datasheet(3/14 Pages) TI1

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CSD17585F5

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SLPS610 – OCTOBER 2016

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5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = 250 μA

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 24 V

100

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 20 V

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = 250 μA

0.9

1.3

1.7

RDS(on)

Drain-to-source on resistance

VGS = 4.5 V, IDS = 0.9 A

Ω

VGS = 10 V, IDS = 0.9 A

gfs

Transconductance

VDS = 3 V, IDS = 0.9 A

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = 15 V,

ƒ = 1 MHz

292

380

Coss

Output capacitance

166

215

Crss

Reverse transfer capacitance

5.7

7.4

Series gate resistance

Ω

Gate charge total (4.5 V)

VDS = 15 V, IDS = 0.9 A

1.9

2.4

Gate charge total (10 V)

3.9

5.1

Qgd

Gate charge gate-to-drain

0.39

Qgs

Gate charge gate-to-source

0.53

Qg(th)

Gate charge at Vth

0.42

Qoss

Output charge

VDS = 15 V, VGS = 0 V

4.1

td(on)

Turnon delay time

VDS = 15 V, VGS = 4.5 V,

IDS = 0.9 A, RG = 2 Ω

Rise time

td(off)

Turnoff delay time

Fall time

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 0.9 A, VGS = 0 V

0.74

1.0

(1)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

°C/W

Junction-to-ambient thermal resistance(2)

245

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