CSD17585F5 datasheet(5/14 Pages) TI1

номер детали	CSD17585F5

подробное описание детали	30-V N-Channel FemtoFET MOSFET

PDF	14 Pages

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производитель	TI1 [Texas Instruments]

домашняя страница	http://www.ti.com

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VSD - Source-to-Drain Voltage (V)

0.2

0.4

0.6

0.8

0.0001

0.001

0.01

0.1

D009

TC = -55°C

TC = -40°C

TC = 25°C

TC = 125°C

TC = 150°C

TC - Case Temperature (°C)

-75

-50

-25

100

125

150

175

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

D008

VGS = 4.5 V

VGS = 10 V

TC - Case Temperature (°C)

-75

-50

-25

100

125

150

175

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.7

D006

VGS - Gate-to-Source Voltage (V)

D007

TC = 25°C, I D = 0.9 A

TC = 125°C, I D = 0.9 A

Qg - Gate Charge (nC)

0.5

1.5

2.5

3.5

4.5

D004

VDS - Drain-to-Source Voltage (V)

100

1000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

CSD17585F5

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Typical MOSFET Characteristics (continued)

TA = 25°C (unless otherwise stated)

ID = 0.9 A

VDS = 15 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

ID = 0.9 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

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