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GD25Q32C датащи(PDF) 46 Page - ELM Electronics |
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GD25Q32C датащи(HTML) 46 Page - ELM Electronics |
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46 / 50 page ![]() 46 Rev.1.0 50 - http://www.elm-tech.com GD25Q32CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash Note: (1). Max Value 4KB tSE with<50K cycles is 200ms and >50K & <100k cycles is 300ms. (2). Max Value 32KB tBE with<50K cycles is 0.8s and >50K & <100k cycles is 1.6s. (3). Max Value 64KB tBE with<50K cycles is 1.2s and >50K & <100k cycles is 2.0s. Symbol Parameter Min. Typ. Max. Unit. tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time (Read/Write) 20 ns tSHQZ Output Disable Time 6 ns tCLQX Output Hold Time 1.2 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tHLCH Hold# Low Setup Time (Relative to Clock) 5 ns tHHCH Hold# High Setup Time (Relative to Clock) 5 ns tCHHL Hold# High Hold Time (Relative to Clock) 5 ns tCHHH Hold# Low Hold Time (Relative to Clock) 5 ns tHLQZ Hold# Low To High-Z Output 6 ns tHHQX Hold# High To Low-Z Output 6 ns tCLQV Clock Low To Output Valid 7 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP CS# High To Deep Power-Down Mode 20 μs tRES1 CS# High To Standby Mode Without Electronic Signature Read 20 μs tRES2 CS# High To Standby Mode With Electronic Signature Read 20 μs tSUS CS# High To Next Command After Suspend 20 μs tRST CS# High To Next Command After Reset 20 μs tW Write Status Register Cycle Time 5 30 ms tBP1 Byte Program Time (First Byte) 30 50 μs tBP2 Additional Byte Program Time (After First Byte) 2.5 12 μs tPP Page Programming Time 0.6 2.4 ms tSE Sector Erase Time (4K Bytes) 50 200/300(1) ms tBE1 Block Erase Time (32K Bytes) 0.15 0.8/1.6(2) s tBE2 Block Erase Time (64K Bytes) 0.25 1.2/2.0(3) s tCE Chip Erase Time (GD25Q32C) 15 30 s |
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