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LPV521 датащи(PDF) 26 Page - Texas Instruments

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номер детали LPV521
подробное описание детали  NanoPower, 1.8-V, RRIO, CMOS Input, Operational Amplifier
PDF  34 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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LPV521 датащи(HTML) 26 Page - Texas Instruments

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LPV521
SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014
www.ti.com
10 Layout
10.1 Layout Guidelines
For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:
•
Noise can propagate into analog circuitry through the power pins of the circuit as a whole and op amp itself.
Bypass capacitors are used to reduce the coupled noise by providing low-impedance power sources local to
the analog circuitry.
•
Connect low-ESR, 0.1-
μF ceramic bypass capacitors between each supply pin and ground, placed as close
to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply
applications.
•
Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds paying attention to the flow of the ground current. For more detailed information refer to
Circuit Board Layout Techniques, SLOA089.
•
In order to reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular
as opposed to in parallel with the noisy trace.
•
Place the external components as close to the device as possible. As shown in Layout Example, keeping RF
and RG close to the inverting input minimizes parasitic capacitance.
•
Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
•
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
10.2 Layout Example
Figure 70. Noninverting Layout Example
26
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