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DS26C32AME/883 датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали DS26C32AME/883
подробное описание детали  Quad Differential Line Receiver
PDF  11 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS26C32AME/883 датащи(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 2,
1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)7V
Common Mode Range (V
CM)
±14V
Differential Input Voltage (V
DIFF)
±14V
Enable Input Voltage (V
IN)7V
Storage Temperature Range (T
STG)
−65˚C to +150˚C
Lead Temperature (Soldering 4 sec.)
260˚C
Maximum Power Dissipation at 25˚C (Note 5)
Ceramic “J” Pkg.
2308 mW
Plastic “N” Pkg.
1645 mW
SOIC “M” Pkg.
1190 mW
Ceramic “E” Pkg.
2108 mW
Ceramic “W” Pkg.
1215 mW
Maximum Current Per Output
±25 mA
This device does not meet 2000V ESD rating. (Note 4)
Operating Conditions
Min
Max
Units
Supply Voltage (V
CC)
4.50
5.50
V
Operating Temperature Range (T
A)
DS26C32AT
−40
+85
˚C
DS26C32AM
−55
+125
˚C
Enable Input Rise or Fall Times
500
ns
DC Electrical Characteristics
V
CC =5V ±10% (unless otherwise specified) (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
TH
Minimum Differential
V
OUT =VOH or VOL
−200
35
+200
mV
Input Voltage
−7V < V
CM < +7V
R
IN
Input Resistance
V
IN = −7V, +7V
DS26C32AT
5.0
6.8
10
k
Ω
(Other Input = GND)
DS26C32AM
4.5
6.8
11
k
Ω
I
IN
Input Current
V
IN = +10V,
DS26C32AT
+1.1
+1.5
mA
Other Input = GND
DS26C32AM
+1.1
+1.8
mA
V
IN = −10V,
DS26C32AT
−2.0
−2.5
mA
Other Input = GND
DS26C32AM
−2.0
−2.7
mA
V
OH
Minimum High Level
V
CC = Min, VDIFF = +1V
3.8
4.2
V
Output Voltage
I
OUT = −6.0 mA
V
OL
Maximum Low Level
V
CC = Max, VDIFF = −1V
0.2
0.3
V
Output Voltage
I
OUT = 6.0 mA
V
IH
Minimum Enable High
2.0
V
Input Level Voltage
V
IL
Maximum Enable Low
0.8
V
Input Level Voltage
I
OZ
Maximum TRI-STATE®
V
OUT =VCC or GND,
Output Leakage Current
ENABLE = V
IL,
±0.5
±5.0
µA
ENABLE = V
IH
I
I
Maximum Enable Input
V
IN =VCC or GND
±1.0
µA
Current
I
CC
Quiescent Power
V
CC = Max,
DS26C32AT
16
23
mA
Supply Current
V
DIF = +1V
DS26C32AM
16
25
mA
V
HYST
Input Hysteresis
V
CM =0V
60
mV
AC Electrical Characteristics
V
CC =5V ±10% (Note 3)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DS26C32AT
DS26C32AM
t
PLH,
Propagation Delay
C
L =50pF
t
PHL
Input to Output
V
DIFF = 2.5V
10
19
30
35
ns
V
CM =0V
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