DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

4 of 6

www.diodes.com

October 2010

© Diodes Incorporated

DMS3016SSSA

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

0

0.5

1.0

1.5

2.0

2.5

3.0

I = 100mA

D

0

4

8

12

16

20

0

0.4

0.6

0.8

1.0

1.2

Fig. 8 Diode Forward Voltage vs. Current

V

, SOURCE-DRAIN VOLTAGE (V)

SD

0.2

T = 25°C

A

0

5

10

15

20

25

30

Fig. 9 Typical Total Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

10

1,000

10,000

100

f = 1MHz

010

20

30

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

0

5

10

15

20

25

30

35

40

45

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

0

2

4

6

8

10

V

= 15V

I = 12.7A

DS

D