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DMS3016SSSA датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMS3016SSSA
подробное описание детали  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMS3016SSSA датащи(HTML) 3 Page - Diodes Incorporated

  DMS3016SSSA Datasheet HTML 1Page - Diodes Incorporated DMS3016SSSA Datasheet HTML 2Page - Diodes Incorporated DMS3016SSSA Datasheet HTML 3Page - Diodes Incorporated DMS3016SSSA Datasheet HTML 4Page - Diodes Incorporated DMS3016SSSA Datasheet HTML 5Page - Diodes Incorporated DMS3016SSSA Datasheet HTML 6Page - Diodes Incorporated  
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DMS3016SSSA
Document number: DS35073 Rev. 1 - 2
3 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DMS3016SSSA
0
0.5
1
1.5
2
Fig. 1 Typical Output Characteristic
V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
10
15
20
25
30
5
V
= 2.0V
GS
V
= 2.2V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.5V
GS
V
= 4.0V
GS
Fig. 2 Typical Transfer Characteristic
V
, GATE-SOURCE VOLTAGE (V)
GS
0
1
1.5
2
2.5
3
0.5
0
5
10
15
20
25
30
V
= 85°C
GS
V
= 125°C
GS
V
= 25°C
GS
V
= -55°C
GS
V
= 150°C
GS
V
= 5V
DS
010
20
15
25
30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
5
0.05
0
0.04
0.01
0.02
0.03
V
= 2.5V
GS
V
= 4.5V
GS
V
= 10V
GS
0
5
10
15
20
25
30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.04
0.03
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
V
= 4.5V
GS
T = 125°C
A
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
V
= 4.5V
I = 10A
GS
D
V
= 10V
I = 20A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.01
0.03
0.02
V
= 4.5V
I = 10A
GS
D
V
= 10V
I = 20A
GS
D



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