DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

2 of 6

www.diodes.com

October 2010

© Diodes Incorporated

DMS3016SSSA

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±12

V

Steady

State

9.8

6.3

A

Pulsed Drain Current (Note 5)

90

A

Avalanche Current (Note 5) (Note 6)

13

A

Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH

25.4

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

1.54

W

81

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

mA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.0

-

2.3

V

Static Drain-Source On-Resistance

-

9

13

mΩ

-

11

16

Forward Transfer Admittance

-

11

-

S

Diode Forward Voltage

-

0.35

0.6

V

Maximum Body-Diode + Schottky Continuous Current

-

-

5

A

-

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

1849

-

pF

f = 1.0MHz

Output Capacitance

-

158

-

pF

Reverse Transfer Capacitance

-

123

-

pF

Gate Resistance

0.53

2.68

4.82

Ω

-

18.5

-

nC

-

43

-

nC

Gate-Source Charge

-

4.7

-

nC

Gate-Drain Charge

-

4.0

-

nC

Turn-On Delay Time

-

6.62

-

ns

Turn-On Rise Time

-

8.73

-

ns

Turn-Off Delay Time

-

36.41

-

ns

Turn-Off Fall Time

-

4.69

-

ns

Notes:

4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.

5. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.