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DS-CPC3710-R02

1

CPC3710

250V N-Channel

Depletion-Mode FET

V

V

(BR)DGX

R

DS(on)

(max)

I

Package

250V

P

10



220mA

SOT-89

Applications

Features

Description

Ordering Information

Package Pinout

 max. at 25ºC

P

The CPC3710 is an N-channel, depletion-mode, field

effect transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third-generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. Our vertical

DMOS process yields a robust device, with high input

impedance, for use in high-power applications. The

CPC3710 is a highly reliable FET device that has

been used extensively in our solid state relays for

industrial and telecommunications applications.

This device excels in power applications requiring

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3710 offers a low, 10

 maximum, on-state

resistance at 25ºC.

The CPC3710 has a minimum breakdown voltage

of 250V

As with all MOS devices, the FET structure prevents

thermal runaway and thermal-induced secondary

breakdown.

Circuit Symbol

S

G

D

Part #

Description

CPC3710CTR

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)

(SOT-89)

G

D

S

D