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CPC3710C датащи(PDF) 3 Page - IXYS Corporation

номер детали CPC3710C
подробное описание детали  Depletion-Mode FET
PDF  5 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC3710C датащи(HTML) 3 Page - IXYS Corporation

  CPC3710C Datasheet HTML 1Page - IXYS Corporation CPC3710C Datasheet HTML 2Page - IXYS Corporation CPC3710C Datasheet HTML 3Page - IXYS Corporation CPC3710C Datasheet HTML 4Page - IXYS Corporation CPC3710C Datasheet HTML 5Page - IXYS Corporation  
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INTEGRATED CIRCUITS DIVISION
CPC3710
www.ixysic.com
3
R02
PERFORMANCE DATA*
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
Output Characteristics
(T
A=25ºC)
V
DS (V)
012345
300
270
240
210
180
150
120
90
60
30
0
6
V
GS=0.0V
V
GS=-2.0V
V
GS=-1.5V
V
GS=-1.0V
Transfer Characteristics
(V
DS=5V)
V
GS (V)
-3.0
-2.5
-2.0
-1.5
-1.0
350
300
250
200
150
100
50
0
+25ºC
-40ºC
+125ºC
V
GS(off) vs. Temperature
(V
DS=10V, ID=1mA)
-40
-0
40
80
120
Temperature (ºC)
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
R
ON vs. Temperature
(V
GS=0V, ID=100mA)
-40
-0
40
80
120
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0
Temperature (ºC)
Ambient Temperature (ºC)
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Power Dissipation
vs. Ambient Temperature
Transconductance Vs. Drain Current
(V
DS=10V)
I
D (mA)
01020
30
40
300
250
200
150
100
50
0
50
60
70
80
100
90
-55ºC
+125ºC
+25ºC
Drain-Source Voltage (V)
0.1
1
10
100
1000
0.001
0.01
0.1
1
Max Rated Safe Operating Area
Capacitance vs. Drain Source Voltage
(V
GS=-5V)
V
DS (V)
010
20
160
140
120
100
80
60
40
20
0
30
40
C
ISS
C
RSS
C
OSS
On-Resistance vs. Drain Current
(V
GS=0V)
I
D (A)
0
0.06
0.12
20
18
16
14
12
10
8
6
4
2
0
0.18
0.24
0.3



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