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2

R02

CPC3710

Absolute Maximum Ratings are stress ratings. Stresses in

excess of these ratings can cause permanent damage to the

device. Functional operation of the device at conditions beyond

those indicated in the operational sections of this data sheet is

not implied.

Absolute Maximum Ratings @ 25ºC

Electrical Characteristics @ 25ºC (Unless Otherwise Noted)

Parameter

Ratings

Units

Drain-to-Source Voltage

250

V

P

Gate-to-Source Voltage

±15

V

P

Pulsed Drain Current

600

mA

1.4

W

Junction Temperature

150

ºC

Operational Temperature

-55 to +125

ºC

Storage Temperature

-55 to +125

ºC

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

OUTPUT

D.U.T.

ton

td(on)

toff

td(off)

INPUT

INPUT

OUTPUT

0V

V

DS

0V

-10V

tf

tr

Switching Waveform & Test Circuit

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Drain-to-Source Breakdown Voltage

V

(BR)DSX

V

250

-

-

V

P

Gate-to-Source Off Voltage

V

GS(off)

V

-1.6

-

-3.9

V

Change in V

dV

V

-

-

4.5

mV / ºC

Gate Body Leakage Current

I

GSS

V

-

-

100

nA

Drain-to-Source Leakage Current

I

D(off)

V

-

-

1

µA

V

-

-

1

mA

Saturated Drain-to-Source Current

I

DSS

V

220

-

-

mA

Static Drain-to-Source On-State Resistance

R

DS(on)

V

-

-

10



Change in R

dR

V

-

-

1.1

% / ºC

Forward Transconductance

G

FS

I

225

-

-

m

Input Capacitance

C

ISS

V

V

f= 1MHz

-

100

350

pF

Common Source Output Capacitance

C

OSS

30

80

Reverse Transfer Capacitance

C

RSS

15

40

Turn-On Delay Time

t

d(on)

V

I

V

R

-

23

35

ns

Rise Time

t

r

820

Turn-Off Delay Time

t

d(off)

17

25

Fall time

t

f

70

80

Source-Drain Diode Voltage Drop

V

SD

V

-

0.6

1.8

V

Thermal Resistance (Junction to Ambient)

-

-

90

-

ºC/W