0

1

2

3

4

5

6

7

8

9

10

0

6

12

18

24

30

36

42

48

54

60

D007

0

2

4

6

8

10

12

0

1

2

3

4

5

6

7

8

D004

Gate 2

Source 2

Gate 1

Source 1

G1

G2

S2

S1

Product

Folder

Sample &

Buy

Technical

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Software

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Community

CSD85302L

SLPS561 – NOVEMBER 2015

CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

Text added for spacing

1 Features

1

•

Common Drain Configuration

Product Summary

•

Low On-Resistance

TYPICAL VALUE

UNIT

•

Small Footprint of 1.35 mm × 1.35 mm

Source-to-Source Voltage

20

V

Gate Charge Total (4.5 V)

6

nC

•

Pb Free and Halogen Free

Gate Charge Gate-to-Drain

1.4

nC

•

RoHS Compliant

29

m

Ω

•

ESD HBM Protection >2.5 kV

20

m

Ω

18.7

m

Ω

2 Applications

Threshold Voltage

0.9

V

•

USB Type-C/PD

•

Battery Management

Ordering Information(1)

•

Battery Protection

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD85302L

3000

7-Inch

1.35 × 1.35 mm Land Grid

Tape and

Reel

Array (LGA) Package

Reel

3 Description

CSD85302LT

250

This 20 V, 18.7 m

Ω, 1.35 mm × 1.35 mm LGA Dual

(1) For all available packages, see the orderable addendum at

NexFET™ power MOSFET is designed to minimize

the end of the data sheet.

resistance in the smallest footprint. Its small footprint

and common drain configuration make the device

Absolute Maximum Ratings

ideal

for

battery-powered

applications

in

small

VALUE

UNIT

handheld devices.

Source-to-Source Voltage

20

V

Gate-to-Source Voltage

±10

V

Top View

Continuous Source Current(1)

7

A

Pulsed Source Current(2)

37

A

Power Dissipation(1)

1.7

W

Human Body Model (HBM)

2.5

kV

Operating Junction and

–55 to 150

°C

Storage Temperature Range

pad on a 0.06 inch thick FR4 PCB.

Configuration

.

.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.