CSD85302LT datasheet(3/13 Pages) TI1

3 / 13 page

CSD85302L

www.ti.com

SLPS561 – NOVEMBER 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVS1S2

Source-to-source voltage

VGS = 0 V, IS = 250 μA

IS1S2

Source-to-source leakage current

VGS = 0 V, VS1S2 = 16 V

μA

IGSS

Gate-to-source leakage current

VS1S2 = 0 V, VGS = 6 V

0.5

µA

VS1S2 = 0 V, VGS = 10V

µA

VGS(th)

Gate-to-source threshold voltage

VS1S2 = VGS, IS = 250 μA

0.68

0.9

1.3

VGS = 2.5 V, IS = 2 A

Ω

RS1S2(on)

Source-to-source on-resistance

VGS = 4.5 V, IS = 2 A

Ω

VGS = 6.5 V, IS = 2 A

18.7

22.5

Ω

gfs

Transconductance

VS1S2 = 2 V, IS = 2 A

DYNAMIC CHARACTERISTICS(1)

Ciss

Input capacitance

718

933

Coss

Output capacitance

VGS = 0 V, VS1S2 = 10 V, ƒ = 1 MHz

120

Crss

Reverse transfer capacitance

Gate charge total (4.5 V)

6.0

7.8

Qgd

Gate charge gate-to-drain

1.4

VS1S2 = 10 V, IS = 2 A

Qgs

Gate charge gate-to-source

1.2

Qg(th)

Gate charge at Vth

0.6

Qoss

Output charge

VS1S2 = 10 V, VGS = 0 V

2.3

td(on)

Turn-on delay time

Rise time

VS1S2 = 10 V, VGS = 4.5 V,

IS1S2 = 2 A, RG = 0 Ω

td(off)

Turn-off delay time

173

Fall time

(1)

Charge and timing values specified are per single FET.

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

Junction-to-ambient thermal resistance(1)

°C/W

RθJA

Junction-to-ambient thermal resistance(2)

175

°C/W

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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