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CSD85302LT датащи(PDF) 5 Page - Texas Instruments

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номер детали CSD85302LT
подробное описание детали  20 V Dual N-Channel NexFET Power MOSFET
PDF  13 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI1 - Texas Instruments

CSD85302LT датащи(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (qC)
-75
-50
-25
0
25
50
75
100
125
150
175
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
D008
VGS = 2.5 V
VGS = 6.5 V
VS1S2 - Source-to-Source Voltage (V)
0.01
0.1
1
10
100
0.01
0.1
1
10
100
D009
DC
10 s
1 s
100 ms
10 ms
1 ms
TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
D006
VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
0
6
12
18
24
30
36
42
48
54
60
D007
TC = 25°C, I S = 2 A
TC = 125°C, I S = 2 A
Qg - Gate Charge (nC)
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
D004
VS1S2 - Source-to-Source Voltage (V)
0
4
8
12
16
20
10
100
1000
10000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
CSD85302L
www.ti.com
SLPS561 – NOVEMBER 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
IS = 2 A
VS1S2 = 6 V
Figure 4. Gate Charge
Figure 5. Capacitance
IS = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Source-to-Source Resistance vs
Gate-to-Source Voltage
IS = 2 A
Single pulse, max RθJA = 90°C/W
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Maximum Safe Operating Area
Copyright © 2015, Texas Instruments Incorporated
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Product Folder Links: CSD85302L



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