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UT8SF2M40MSFC датащи(PDF) 7 Page - Aeroflex Circuit Technology

номер детали UT8SF2M40MSFC
подробное описание детали  UT8SF2M40 80Megabit Flow-thru SSRAM
PDF  23 Pages
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производитель  AEROFLEX [Aeroflex Circuit Technology]
домашняя страница  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

UT8SF2M40MSFC датащи(HTML) 7 Page - Aeroflex Circuit Technology

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7
36-00-01-00
5
Ver. 1.0.0
Aeroflex Microelectronics Solutions - HiRel
Changing Clock Frequencies
The CLK input frequency should be established at a power on,
and may only be changed while in SLEEP mode (reference
Table 6).
External Connections
A precision 25kohm < +0.2% low TCR < 25ppm/oC resistor is
required to be connected between device pin EXTRES (R15)
and VSS.
In order to ensure proper operation in conjunction with JTAG
boundary scan (reference applications note MEM-AN-005),
Aeroflex requires that specific package pins be biased through
soft connections to either VDDQ or VSSQ. Table 5 is a list of
these required external biases.
Notes:
1. NUIL = Not Used Input Low
2. NUIH = Not Used Input High
3. Aeroflex recommends connecting all DQ[47:0] to either VDDQ or VSSQ
through >10kΩ resistors.
Notes:
* All chip selects active when L, at least one chip select inactive when H
1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW.
2. Write is defined by WE and BWEx
3. When a Write cycle is detected, all I/Os are tri-stated.
4. The DQ pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally
during Write cycles. During a Read cycle DQs = tri-state when OE is inactive or when
the device is deselected and DQs = data when OE is active.
Table 5. External Bias Conditions
Signal Name
Package Pin
Bias Condition
NUIL1
H1, H20, N1, N2,
N19, N20, P13,
R7, R8, R10, R12,
R13, R14, R16
>10kΩ to VSSQ
NUIH2
P16, R8
>10kΩ to VDDQ
TDO
R5
>10kΩ to VDDQ
TCK
R9
>10kΩ to VSSQ
DQ[47:0]3
ref Table 7
>10kΩ to VDDQ or
VSSQ
Table 6: Truth Table for UT8SF2M40[1,2,3,4,5,6,7]
Operation
Address
Used
CSx*
ZZ
SHUT
DOWN
ADV_LD
WE
BWEx
OE
CEN
CLK
DQs
Standby Mode
None
H
L
L
L
X
X
X
L
L-H
3-State
Continue Deselect
None
X
L
L
H
X
X
X
L
L-H
3-State
Read Cycle (Start Burst)
External
L
L
L
L
H
X
L
L
L-H
Data Out
Read Cycle (Cont. Burst)
Next
X
L
L
H
X
X
L
L
L-H
Data Out
NOP/Dummy Read
(Start)
External
L
L
L
L
H
X
H
L
L-H
3-State
NOP/Dummy Read
(Cont.)
Next
X
L
L
H
X
X
H
L
L-H
3-State
Write Cycle (Start Burst)
External
L
L
L
L
L
L
X
L
L-H
Data In
Write Cycle (Cont. Burst)
Next
X
L
L
H
X
L
X
L
L-H
Data In
Dummy Write (Start)
None
L
L
L
L
L
H
X
L
L-H
3-State
Dummy Write (Cont.
Burst)
Next
X
L
L
H
X
H
X
L
L-H
3-State
Clock Inhibit (Stall)
N/A
X
L
L
X
X
X
X
H
L-H
N/A
Sleep Mode
N/A
H
H
L
X
X
X
X
X
X
3-State
Shutdown Mode
None
X
X
H
X
X
X
X
X
X
3-State



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