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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F303VE датащи(PDF) 102 Page - STMicroelectronics |
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STM32F303VE датащи(HTML) 102 Page - STMicroelectronics |
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102 / 184 page  Electrical characteristics STM32F303xD STM32F303xE 102/184 DocID026415 Rev 4 Table 47. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings(1) 1. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 8THCLK+1 8THCLK+2 ns tw(NWE) FMC_NWE low time 6THCLK-1 6THCLK+2 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK-0.5 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK+2 - Table 48. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1) 1. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 8THCLK+2 8THCLK+2 ns tw(NOE) FMC_NWE low time 6THCLK-1 6THCLK+1.5 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 4THCLK+6 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK-4 - |
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