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STM32F303VE датащи(PDF) 76 Page - STMicroelectronics |
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STM32F303VE датащи(HTML) 76 Page - STMicroelectronics |
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76 / 184 page ![]() Electrical characteristics STM32F303xD STM32F303xE 76/184 DocID026415 Rev 4 6.3.4 Embedded reference voltage The parameters given in Table 23 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 19. 6.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 13: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark code. Note: The total current consumption is the sum of IDD and IDDA. Table 23. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25 V –40 °C < TA < +85 °C 1.16 1.2 1.24(1) 1. Data based on characterization results, not tested in production. V TS_vrefint ADC sampling time when reading the internal reference voltage -2.2 - - µs VRERINT Internal reference voltage spread over the temperature range VDD = 3 V ±10 mV - - 10(2) 2. Guaranteed by design, not tested in production. mV TCoeff Temperature coefficient - - - 100(2) ppm/°C Table 24. Internal reference voltage calibration values Calibration value name Description Memory address VREFINT_CAL Raw data acquired at temperature of 30 °C VDDA= 3.3 V 0x1FFF F7BA - 0x1FFF F7BB |
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