STB130N6F7 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STB130N6F7

4/14

DocID027380 Rev 5

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 60 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 40 A

4.2

5.0

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

2600

Coss

Output capacitance

1200

Crss

Reverse transfer capacitance

115

Total gate charge

VDD = 30 V, ID = 80 A,

VGS = 10 V (see Figure

14: "Test circuit for gate

charge behavior")

Qgs

Gate-source charge

13.6

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 40 A,

RG = 4.7

Ω, VGS = 10 V (see

Figure 13: "Test circuit for

resistive load switching

times" and Figure 18:

"Switching time waveform")

Rise time

td(off)

Turn-off delay time

Fall time

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

VGS = 0 V, ISD = 80 A

1.2

trr

Reverse recovery time

ISD = 80 A, di/dt = 100 A/µs,

VDD = 48 V (see Figure 15:

"Test circuit for inductive load

switching and diode recovery

times")

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

2.2

Notes:

(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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